EGF1THE3_A/H Vishay General Semiconductor
auf Bestellung 17285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.49 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.54 EUR |
| 1500+ | 0.49 EUR |
| 3000+ | 0.47 EUR |
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Technische Details EGF1THE3_A/H Vishay General Semiconductor
Description: DIODE GEN PURP 1.3KV 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1300 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1300 V, Qualification: AEC-Q101.
Weitere Produktangebote EGF1THE3_A/H nach Preis ab 0.65 EUR bis 1.30 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| EGF1THE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.3KV 1A DO214BAPackaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 |
auf Bestellung 1030 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1THE3_A/H | Hersteller : Vishay |
Diode Switching 1.3KV 1A 2-Pin Case GF1 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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EGF1THE3_A/H | Hersteller : Vishay |
Diode Switching 1.3KV 1A Automotive AEC-Q101 2-Pin Case GF1 T/R |
Produkt ist nicht verfügbar |
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| EGF1THE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |