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EM6K7T2R

EM6K7T2R Rohm Semiconductor

em6k7-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.22 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EM6K7T2R Rohm Semiconductor

Description: MOSFET 2N-CH 20V 0.2A EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: EMT6, Part Status: Active.

Weitere Produktangebote EM6K7T2R nach Preis ab 0.19 EUR bis 1.07 EUR

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EM6K7T2R EM6K7T2R Hersteller : ROHM Semiconductor ROHM_S_A0008995594_1-2562882.pdf MOSFETs TRNSISTR DUAL MOSFET
auf Bestellung 7758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
10+0.66 EUR
100+0.36 EUR
1000+0.23 EUR
8000+0.20 EUR
24000+0.19 EUR
Mindestbestellmenge: 4
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EM6K7T2R EM6K7T2R Hersteller : Rohm Semiconductor em6k7-e.pdf Description: MOSFET 2N-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 12629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
2000+0.26 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
EM6K7T2R Hersteller : ROHM SEMICONDUCTOR em6k7-e.pdf EM6K7T2R Multi channel transistors
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