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EM6M1T2R

EM6M1T2R Rohm Semiconductor

EM6M1.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
auf Bestellung 7965 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
25+ 1.04 EUR
100+ 0.73 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
2000+ 0.41 EUR
Mindestbestellmenge: 22
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Technische Details EM6M1T2R Rohm Semiconductor

Description: MOSFET N/P-CH 30V/20V EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA, Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V, Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, FET Feature: Logic Level Gate, Supplier Device Package: EMT6, Part Status: Not For New Designs.

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EM6M1T2R EM6M1T2R Hersteller : ROHM Semiconductor rohm_semiconductor_rohms21636-1-1742587.pdf MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A
auf Bestellung 242 Stücke:
Lieferzeit 14-28 Tag (e)
EM6M1T2R EM6M1T2R Hersteller : Rohm Semiconductor EM6M1.pdf Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
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