EM6M2T2R

EM6M2T2R Rohm Semiconductor


datasheet?p=EM6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 17500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.26 EUR
16000+0.24 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EM6M2T2R Rohm Semiconductor

Description: MOSFET N/P-CH 20V 0.2A EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V, Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: EMT6, Part Status: Active.

Weitere Produktangebote EM6M2T2R nach Preis ab 0.12 EUR bis 1.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
EM6M2T2R EM6M2T2R Hersteller : ROHM SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB084EDE6B1A2E0D6&compId=EM6M2T2R.pdf?ci_sign=53c312f5613b4832fe498eb8a04807f30e8fdf3d Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.4A
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4222 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
193+0.37 EUR
272+0.26 EUR
353+0.20 EUR
538+0.13 EUR
8000+0.12 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
EM6M2T2R EM6M2T2R Hersteller : ROHM SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB084EDE6B1A2E0D6&compId=EM6M2T2R.pdf?ci_sign=53c312f5613b4832fe498eb8a04807f30e8fdf3d Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.4A
Version: ESD
auf Bestellung 4222 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
272+0.26 EUR
353+0.20 EUR
538+0.13 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
EM6M2T2R EM6M2T2R Hersteller : ROHM Semiconductor datasheet?p=EM6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs 1.2V Drive Nch+Pch MOSFET
auf Bestellung 15745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.00 EUR
10+0.70 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.31 EUR
8000+0.25 EUR
24000+0.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
EM6M2T2R EM6M2T2R Hersteller : Rohm Semiconductor datasheet?p=EM6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 21863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.30 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH