EM6M2T2R Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.26 EUR |
| 16000+ | 0.24 EUR |
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Technische Details EM6M2T2R Rohm Semiconductor
Description: MOSFET N/P-CH 20V 0.2A EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V, Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: EMT6, Part Status: Active.
Weitere Produktangebote EM6M2T2R nach Preis ab 0.12 EUR bis 1.21 EUR
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EM6M2T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.2/-0.2A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±8/±10V On-state resistance: 1/1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.4A Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4222 Stücke: Lieferzeit 7-14 Tag (e) |
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EM6M2T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.2/-0.2A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±8/±10V On-state resistance: 1/1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.4A Version: ESD |
auf Bestellung 4222 Stücke: Lieferzeit 14-21 Tag (e) |
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EM6M2T2R | Hersteller : ROHM Semiconductor |
MOSFETs 1.2V Drive Nch+Pch MOSFET |
auf Bestellung 15745 Stücke: Lieferzeit 10-14 Tag (e) |
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EM6M2T2R | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 0.2A EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
auf Bestellung 21863 Stücke: Lieferzeit 10-14 Tag (e) |
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