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EMB10T2R

EMB10T2R Rohm Semiconductor

datasheet?p=EMB10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.24 EUR
16000+ 0.21 EUR
Mindestbestellmenge: 8000
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Technische Details EMB10T2R Rohm Semiconductor

Description: TRANS 2PNP PREBIAS 0.15W EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT6, Part Status: Active.

Weitere Produktangebote EMB10T2R nach Preis ab 0.21 EUR bis 0.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
EMB10T2R EMB10T2R Hersteller : Rohm Semiconductor datasheet?p=EMB10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
37+ 0.71 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 28
EMB10T2R EMB10T2R Hersteller : ROHM Semiconductor datasheet?p=EMB10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
auf Bestellung 16643 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.94 EUR
69+ 0.76 EUR
101+ 0.52 EUR
1000+ 0.29 EUR
2500+ 0.25 EUR
8000+ 0.21 EUR
Mindestbestellmenge: 56
EMB10T2R Hersteller : ROHM SEMICONDUCTOR datasheet?p=EMB10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key EMB10T2R PNP SMD transistors
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