EMB10T2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Part Status: Active
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Technische Details EMB10T2R Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6, Part Status: Active, Supplier Device Package: EMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote EMB10T2R nach Preis ab 0.17 EUR bis 0.95 EUR
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EMB10T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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EMB10T2R | ROHM Semiconductor |
Digital Transistors DUAL PNP 50V 100MA |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EMB10T2R |
|
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 37+ | 0.57 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.2 EUR |
| EMB10T2R |
|
Hersteller: ROHM Semiconductor
Digital Transistors DUAL PNP 50V 100MA
Digital Transistors DUAL PNP 50V 100MA
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.95 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.23 EUR |
| 5000+ | 0.17 EUR |