EMD22T2R Rohm Semiconductor
auf Bestellung 3429 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 770+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| 2500+ | 0.16 EUR |
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Technische Details EMD22T2R Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT6.
Weitere Produktangebote EMD22T2R nach Preis ab 0.17 EUR bis 0.8 EUR
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EMD22T2R | Hersteller : Rohm Semiconductor |
 Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
auf Bestellung 7385 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD22T2R | Hersteller : ROHM Semiconductor |
Digital Transistors PRE-BIASED 50V 100MA |
auf Bestellung 6795 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMD22 T2R | Hersteller : ROHM | SOT23-6 |
auf Bestellung 5090 Stücke: Lieferzeit 21-28 Tag (e) |
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| EMD22T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Type of transistor: NPN / PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Current gain: 80 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT; complementary pair Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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EMD22T2R | Hersteller : Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
Produkt ist nicht verfügbar |
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| EMD22T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Type of transistor: NPN / PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Current gain: 80 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT; complementary pair |
Produkt ist nicht verfügbar |