EMD6FHAT2R Rohm Semiconductor
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 404+ | 0.37 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.30 EUR |
| 5000+ | 0.28 EUR |
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Technische Details EMD6FHAT2R Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (CORR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: EMT6, Grade: Automotive, Part Status: Not For New Designs, Qualification: AEC-Q101.
Weitere Produktangebote EMD6FHAT2R nach Preis ab 0.08 EUR bis 0.59 EUR
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EMD6FHAT2R | Hersteller : ROHM Semiconductor |
 Bipolar Transistors - BJT NPN+PNP SOT-563 4.7kO Input Resist |
auf Bestellung 6959 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMD6FHAT2R | Hersteller : ROHM SEMICONDUCTOR |
EMD6FHAT2R Complementary transistors |
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EMD6FHAT2R | Hersteller : Rohm Semiconductor |
Description: PNP+NPN DIGITAL TRANSISTOR (CORR Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: EMT6 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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EMD6FHAT2R | Hersteller : Rohm Semiconductor |
Description: PNP+NPN DIGITAL TRANSISTOR (CORR Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: EMT6 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |