EMD6FHAT2R

EMD6FHAT2R Rohm Semiconductor


963389726733616umd6nfha.pdf Hersteller: Rohm Semiconductor
Trans Digital BJT NPN/PNP 50V 100mA 150mW Automotive 6-Pin EMT T/R
auf Bestellung 8000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
519+0.3 EUR
Mindestbestellmenge: 519
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Technische Details EMD6FHAT2R Rohm Semiconductor

Description: PNP+NPN DIGITAL TRANSISTOR (CORR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: EMT6, Part Status: Not For New Designs, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote EMD6FHAT2R nach Preis ab 0.15 EUR bis 0.93 EUR

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EMD6FHAT2R EMD6FHAT2R Hersteller : ROHM Semiconductor ROHM_S_A0002832469_1-2561652.pdf Bipolar Transistors - BJT NPN+PNP SOT-563 4.7kO Input Resist
auf Bestellung 7959 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.93 EUR
77+ 0.68 EUR
135+ 0.39 EUR
500+ 0.27 EUR
1000+ 0.21 EUR
2500+ 0.16 EUR
8000+ 0.15 EUR
Mindestbestellmenge: 57
EMD6FHAT2R Hersteller : ROHM SEMICONDUCTOR TR_UL-e.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 100...600
Type of transistor: NPN / PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
EMD6FHAT2R EMD6FHAT2R Hersteller : Rohm Semiconductor TR_UL-e.pdf Description: PNP+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
EMD6FHAT2R EMD6FHAT2R Hersteller : Rohm Semiconductor TR_UL-e.pdf Description: PNP+NPN DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
EMD6FHAT2R Hersteller : ROHM SEMICONDUCTOR TR_UL-e.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 100...600
Type of transistor: NPN / PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar