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EMF5T2R

EMF5T2R Rohm Semiconductor

datasheet?p=EMF5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.32 EUR
Mindestbestellmenge: 8000
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Technische Details EMF5T2R Rohm Semiconductor

Description: TRANS NPN PREBIAS/PNP 0.15W EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 12V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V, Frequency - Transition: 250MHz, 260MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT6.

Weitere Produktangebote EMF5T2R nach Preis ab 0.3 EUR bis 1.02 EUR

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Preis ohne MwSt
EMF5T2R EMF5T2R Hersteller : Rohm Semiconductor datasheet?p=EMF5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 13618 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
31+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.38 EUR
2000+ 0.34 EUR
Mindestbestellmenge: 27
EMF5T2R EMF5T2R Hersteller : ROHM Semiconductor datasheet?p=EMF5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - Pre-Biased DUAL PNP/NPN
auf Bestellung 7999 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
60+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.36 EUR
2500+ 0.34 EUR
8000+ 0.3 EUR
Mindestbestellmenge: 52
EMF5T2R datasheet?p=EMF5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
auf Bestellung 7252 Stücke:
Lieferzeit 21-28 Tag (e)
EMF5T2R Hersteller : ROHM SEMICONDUCTOR datasheet?p=EMF5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key EMF5T2R Complementary transistors
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