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EMG11T2R

EMG11T2R Rohm Semiconductor

datasheet?p=EMG11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.21 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EMG11T2R Rohm Semiconductor

Description: TRANS 2NPN PREBIAS 0.15W EMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT5.

Weitere Produktangebote EMG11T2R nach Preis ab 0.23 EUR bis 0.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EMG11T2R EMG11T2R ROHM Semiconductor emg11t2r-e-1872929.pdf Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
auf Bestellung 7997 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.8 EUR
10+0.65 EUR
100+0.45 EUR
500+0.33 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EMG11T2R EMG11T2R Rohm Semiconductor datasheet?p=EMG11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT5
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 15795 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
33+0.64 EUR
100+0.44 EUR
500+0.32 EUR
1000+0.25 EUR
2000+0.23 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EMG11T2R emg11t2r-e-1872929.pdf
EMG11T2R
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
auf Bestellung 7997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.8 EUR
10+0.65 EUR
100+0.45 EUR
500+0.33 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EMG11T2R datasheet?p=EMG11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMG11T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 15795 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
33+0.64 EUR
100+0.44 EUR
500+0.32 EUR
1000+0.25 EUR
2000+0.23 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH