EMG8T2R

EMG8T2R Rohm Semiconductor


datasheet?p=EMG8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
auf Bestellung 8000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.24 EUR
Mindestbestellmenge: 8000
Produktrezensionen
Produktbewertung abgeben

Technische Details EMG8T2R Rohm Semiconductor

Description: TRANS 2NPN PREBIAS 0.15W EMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT5.

Weitere Produktangebote EMG8T2R nach Preis ab 0.25 EUR bis 0.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
EMG8T2R EMG8T2R Hersteller : Rohm Semiconductor datasheet?p=EMG8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
auf Bestellung 15975 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
37+ 0.71 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 28
EMG8T2R Hersteller : ROHM datasheet?p=EMG8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
EMG8T2R Hersteller : ROHM datasheet?p=EMG8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key 0449+ EMT5
auf Bestellung 9260 Stücke:
Lieferzeit 21-28 Tag (e)
EMG8T2R Hersteller : ROHM datasheet?p=EMG8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key EMT5 0449+
auf Bestellung 9260 Stücke:
Lieferzeit 21-28 Tag (e)
EMG8 T2R Hersteller : ROHM SOT25/SOT353
auf Bestellung 5970 Stücke:
Lieferzeit 21-28 Tag (e)
EMG8 T2R Hersteller : ROHM SOT553
auf Bestellung 56000 Stücke:
Lieferzeit 21-28 Tag (e)
EMG8T2R Hersteller : ROHM SEMICONDUCTOR datasheet?p=EMG8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 150mW
Case: SOT553
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
EMG8T2R EMG8T2R Hersteller : ROHM Semiconductor emg8t2r-e-1018040.pdf Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Produkt ist nicht verfügbar
EMG8T2R Hersteller : ROHM SEMICONDUCTOR datasheet?p=EMG8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 150mW
Case: SOT553
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar