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EMH10FHAT2R

EMH10FHAT2R ROHM Semiconductor

ROHM_S_A0002832617_1-2561773.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased NPN+NPN SOT-563 50V VCC 0.1A IC
auf Bestellung 1342 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+0.64 EUR
10+0.44 EUR
100+0.27 EUR
1000+0.14 EUR
2500+0.11 EUR
8000+0.092 EUR
24000+0.088 EUR
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Technische Details EMH10FHAT2R ROHM Semiconductor

Description: TRANS PREBIAS 2NPN 100MA EMT6, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: EMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Weitere Produktangebote EMH10FHAT2R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EMH10FHAT2R EMH10FHAT2R Rohm Semiconductor EMT6_Marking.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EMH10FHAT2R EMH10FHAT2R Rohm Semiconductor EMT6_Marking.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EMH10FHAT2R EMT6_Marking.pdf
EMH10FHAT2R
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EMH10FHAT2R EMT6_Marking.pdf
EMH10FHAT2R
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH