EMH10FHAT2R

EMH10FHAT2R ROHM Semiconductor


ROHM_S_A0002832617_1-2561773.pdf Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased NPN+NPN SOT-563 50V VCC 0.1A IC
auf Bestellung 1342 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.54 EUR
10+0.37 EUR
100+0.23 EUR
1000+0.12 EUR
2500+0.093 EUR
8000+0.077 EUR
24000+0.074 EUR
Mindestbestellmenge: 6
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Technische Details EMH10FHAT2R ROHM Semiconductor

Description: TRANS PREBIAS 2NPN 100MA EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote EMH10FHAT2R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
EMH10FHAT2R EMH10FHAT2R Hersteller : Rohm Semiconductor EMT6_Marking.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EMH10FHAT2R EMH10FHAT2R Hersteller : Rohm Semiconductor EMT6_Marking.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH