| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.76 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.32 EUR |
| 1000+ | 0.2 EUR |
| 8000+ | 0.17 EUR |
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Technische Details EMH10T2R ROHM Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: EMT6.
Weitere Produktangebote EMH10T2R nach Preis ab 0.25 EUR bis 1.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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EMH10T2R | Rohm Semiconductor |
 Description: TRANS 2NPN PREBIAS 0.15W EMT6Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
auf Bestellung 6470 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EMH10T2R |
|
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
auf Bestellung 6470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 33+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 2000+ | 0.25 EUR |