EMH1FHAT2R

EMH1FHAT2R ROHM Semiconductor


ROHM_S_A0002832465_1-2561799.pdf Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased NPN+NPN SOT-563 50V VCC 0.1A IC
auf Bestellung 7975 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.44 EUR
100+0.25 EUR
1000+0.13 EUR
8000+0.084 EUR
24000+0.081 EUR
48000+0.07 EUR
Mindestbestellmenge: 5
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Technische Details EMH1FHAT2R ROHM Semiconductor

Description: TRANS PREBIAS 2NPN 100MA EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: EMT6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote EMH1FHAT2R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
EMH1FHAT2R EMH1FHAT2R Hersteller : Rohm Semiconductor EMT6_T2R_taping.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EMH1FHAT2R EMH1FHAT2R Hersteller : Rohm Semiconductor EMT6_T2R_taping.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH