Produkte > ROHM SEMICONDUCTOR > EMH1FHAT2R
EMH1FHAT2R

EMH1FHAT2R ROHM Semiconductor

ROHM_S_A0002832465_1-2561799.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased NPN+NPN SOT-563 50V VCC 0.1A IC
auf Bestellung 7975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.73 EUR
10+0.52 EUR
100+0.3 EUR
1000+0.15 EUR
8000+0.1 EUR
24000+0.096 EUR
48000+0.083 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details EMH1FHAT2R ROHM Semiconductor

Description: TRANS PREBIAS 2NPN 100MA EMT6, Power - Max: 150mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: EMT6, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector (Ic) (Max): 100mA.

Weitere Produktangebote EMH1FHAT2R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EMH1FHAT2R EMH1FHAT2R Rohm Semiconductor EMT6_T2R_taping.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EMH1FHAT2R EMH1FHAT2R Rohm Semiconductor EMT6_T2R_taping.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EMH1FHAT2R EMT6_T2R_taping.pdf
EMH1FHAT2R
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EMH1FHAT2R EMT6_T2R_taping.pdf
EMH1FHAT2R
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH