EMH3FHAT2R ROHM Semiconductor
Hersteller: ROHM SemiconductorBipolar Transistors - BJT NPN+NPN Digital transistor (Corresponds to AEC-Q101)
auf Bestellung 5216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| 2500+ | 0.16 EUR |
| 8000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
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Technische Details EMH3FHAT2R ROHM Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: EMT6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote EMH3FHAT2R nach Preis ab 0.12 EUR bis 0.79 EUR
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EMH3FHAT2R | Hersteller : Rohm Semiconductor |
Description: NPN+NPN DIGITAL TRANSISTOR (CORR Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: EMT6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8531 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMH3FHAT2R | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 150mW Automotive 6-Pin EMT T/R |
auf Bestellung 7683 Stücke: Lieferzeit 14-21 Tag (e) |
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EMH3FHAT2R | Hersteller : Rohm Semiconductor |
Description: NPN+NPN DIGITAL TRANSISTOR (CORR Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: EMT6 Grade: Automotive Qualification: AEC-Q101 |
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