EMH60T2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.13 EUR |
| 16000+ | 0.12 EUR |
| 24000+ | 0.12 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
8000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details EMH60T2R Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6, Supplier Device Package: EMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote EMH60T2R nach Preis ab 0.12 EUR bis 0.74 EUR
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EMH60T2R | ROHM Semiconductor |
Digital Transistors NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) |
auf Bestellung 160464 Stücke: Lieferzeit 10-14 Tag (e) |
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EMH60T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V EMT6 Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
auf Bestellung 39007 Stücke: Lieferzeit 10-14 Tag (e) |
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EMH60T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Kind of transistor: BRT Current gain: 80 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V |
auf Bestellung 7656 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| EMH60T2R |
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Hersteller: ROHM Semiconductor
Digital Transistors NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor)
Digital Transistors NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor)
auf Bestellung 160464 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.74 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.17 EUR |
| 5000+ | 0.13 EUR |
| 8000+ | 0.12 EUR |
| EMH60T2R |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS PREBIAS 2NPN 50V EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
auf Bestellung 39007 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 47+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| EMH60T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Kind of transistor: BRT
Current gain: 80
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Kind of transistor: BRT
Current gain: 80
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
auf Bestellung 7656 Stücke:
Lieferzeit 14-21 Tag (e)