EMH60T2R Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.13 EUR |
| 16000+ | 0.11 EUR |
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Technische Details EMH60T2R Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT6.
Weitere Produktangebote EMH60T2R nach Preis ab 0.06 EUR bis 0.74 EUR
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EMH60T2R | Hersteller : ROHM Semiconductor |
Digital Transistors NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) |
auf Bestellung 319140 Stücke: Lieferzeit 10-14 Tag (e) |
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EMH60T2R | Hersteller : Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
auf Bestellung 47960 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMH60T2R | Hersteller : ROHM SEMICONDUCTOR |
EMH60T2R NPN SMD transistors |
auf Bestellung 7890 Stücke: Lieferzeit 7-14 Tag (e) |
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