EMX51T2R Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NPN+NPN DRIVER TRANSISTOR. TWO 2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EMX51T2R Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Frequency - Transition: 400MHz, Supplier Device Package: EMT6.
Weitere Produktangebote EMX51T2R nach Preis ab 0.081 EUR bis 0.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
EMX51T2R | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6 |
auf Bestellung 16981 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
EMX51T2R | Hersteller : Rohm Semiconductor |
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 400MHz Supplier Device Package: EMT6 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|