EMX51T2R ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.62 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.24 EUR |
| 1000+ | 0.17 EUR |
| 2500+ | 0.13 EUR |
| 8000+ | 0.1 EUR |
| 24000+ | 0.099 EUR |
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Technische Details EMX51T2R ROHM Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2, Supplier Device Package: EMT6, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 20V, Current - Collector (Ic) (Max): 200mA, Power - Max: 150mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote EMX51T2R nach Preis ab 0.13 EUR bis 0.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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EMX51T2R | Rohm Semiconductor |
 Description: NPN+NPN DRIVER TRANSISTOR. TWO 2Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: 150°C (TJ) |
auf Bestellung 7985 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMX51T2R |
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Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
auf Bestellung 7985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |