EPC2016
Hersteller: EPC
Description: GANFET N-CH 100V 11A DIE
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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Technische Details EPC2016 EPC
Description: GANFET N-CH 100V 11A DIE, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +6V, -5V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).
Weitere Produktangebote EPC2016
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| EPC2016 | Hersteller : EPC |
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