EPC2018
Hersteller: EPC
Description: GANFET N-CH 150V 12A DIE
Vgs (Max): +6V, -5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Drain to Source Voltage (Vdss): 150 V
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Technische Details EPC2018 EPC
Description: GANFET N-CH 150V 12A DIE, Vgs (Max): +6V, -5V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V, Drain to Source Voltage (Vdss): 150 V.