EPC2019
Hersteller: EPC
Description: GANFET N-CH 200V 8.5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.82 EUR |
| 3000+ | 3.57 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2019 EPC
Description: GANFET N-CH 200V 8.5A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 1.5mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Weitere Produktangebote EPC2019 nach Preis ab 3.42 EUR bis 10.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
EPC2019 | EPC |
|
auf Bestellung 2913 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
EPC2019 | EPC |
Description: GANFET N-CH 200V 8.5A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 20325 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2019 |
|
Hersteller: EPC
auf Bestellung 2913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.14 EUR |
| 10+ | 5.28 EUR |
| 100+ | 4.82 EUR |
| 500+ | 4.25 EUR |
| 1000+ | 3.69 EUR |
| 2000+ | 3.45 EUR |
| 5000+ | 3.42 EUR |
| EPC2019 |
|
Hersteller: EPC
Description: GANFET N-CH 200V 8.5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: GANFET N-CH 200V 8.5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 20325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.47 EUR |
| 10+ | 6.95 EUR |
| 50+ | 5.44 EUR |
| 100+ | 4.95 EUR |
| 500+ | 4.37 EUR |