EPC2031ENGRT
Hersteller: EPC
Description: GANFET NCH 60V 31A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
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Technische Details EPC2031ENGRT EPC
Description: GANFET NCH 60V 31A DIE, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 15mA, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): +6V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V.
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EPC2031ENGRT | Hersteller : EPC |
Description: GANFET NCH 60V 31A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
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