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EPC2039

EPC2039

EPC2039_datasheet.pdf Hersteller: EPC
Description: GANFET N-CH 80V 6.8A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.07 EUR
5000+1.03 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2039 EPC

Description: GANFET N-CH 80V 6.8A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40.

Weitere Produktangebote EPC2039 nach Preis ab 1.25 EUR bis 3.66 EUR

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EPC2039 EPC2039 Hersteller : EPC EPC2039_datasheet.pdf Description: GANFET N-CH 80V 6.8A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 40870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.35 EUR
100+1.60 EUR
500+1.28 EUR
1000+1.25 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
EPC2039 Hersteller : Efficient Power Conversion epc2039_datasheet.pdf Trans MOSFET N-CH GaN 80V 6.8A 9-Pin Die T/R
Produkt ist nicht verfügbar
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