EPC2100ENGRT
Hersteller: EPCDescription: GANFET 2 N-CH 30V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Active
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Technische Details EPC2100ENGRT EPC
Description: GANFET 2 N-CH 30V 9.5A/38A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V, Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V, Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V, Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA, Supplier Device Package: Die, Part Status: Active.
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EPC2100ENGRT | Hersteller : EPC |
Description: GANFET 2 N-CH 30V 9.5A/38A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Supplier Device Package: Die Part Status: Active |
Produkt ist nicht verfügbar |