EPC2101ENGRT
Hersteller: EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Drain to Source Voltage (Vdss): 60V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
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Technische Details EPC2101ENGRT EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 2mA, Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A, Drain to Source Voltage (Vdss): 60V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Part Status: Discontinued at Digi-Key.
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EPC2101ENGRT | Hersteller : EPC |
Description: GANFET 2N-CH 60V 9.5A/38A DIE Part Status: Discontinued at Digi-Key Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Drain to Source Voltage (Vdss): 60V Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) |
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