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EPC2107

EPC2107


EPC2107_datasheet.pdf
Hersteller: EPC
Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2107 EPC

Description: MOSFET 3N-CH 100V 9BGA, Part Status: Active, Supplier Device Package: 9-BGA (1.35x1.35), Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA, Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V, Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA, Drain to Source Voltage (Vdss): 100V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Mounting Type: Surface Mount, Package / Case: 9-VFBGA, Packaging: Tape & Reel (TR).

Weitere Produktangebote EPC2107 nach Preis ab 1.61 EUR bis 4.4 EUR

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EPC2107 EPC2107 Hersteller : EPC EPC2107_datasheet.pdf Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
auf Bestellung 5068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+2.84 EUR
100+1.96 EUR
500+1.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH