EPC2108
Hersteller: EPCDescription: MOSFET 3N-CH 60V/100V 9BGA
Packaging: Cut Tape (CT)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package: 9-BGA (1.35x1.35)
Part Status: Obsolete
auf Bestellung 764 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.31 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.90 EUR |
| 500+ | 1.53 EUR |
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Technische Details EPC2108 EPC
Description: MOSFET 3N-CH 60V/100V 9BGA, Packaging: Tape & Reel (TR), Package / Case: 9-VFBGA, Mounting Type: Surface Mount, Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, 100V, Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V, Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA, Supplier Device Package: 9-BGA (1.35x1.35), Part Status: Obsolete.
Weitere Produktangebote EPC2108
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EPC2108 | Hersteller : EPC |
Description: MOSFET 3N-CH 60V/100V 9BGA Packaging: Tape & Reel (TR) Package / Case: 9-VFBGA Mounting Type: Surface Mount Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Supplier Device Package: 9-BGA (1.35x1.35) Part Status: Obsolete |
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