Produkte > EPC > EPC2108
EPC2108

EPC2108

EPC2108_datasheet.pdf
Hersteller: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.51 EUR
100+1.72 EUR
500+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details EPC2108 EPC

Description: MOSFET 3N-CH 60V/100V 9BGA, Part Status: Obsolete, Supplier Device Package: 9-BGA (1.35x1.35), Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA, Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V, Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA, Drain to Source Voltage (Vdss): 60V, 100V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Package / Case: 9-VFBGA.

Weitere Produktangebote EPC2108

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
EPC2108 EPC2108 Hersteller : EPC EPC2108_datasheet.pdf Description: MOSFET 3N-CH 60V/100V 9BGA
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH