EPC2110
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
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Technische Details EPC2110 EPC
Description: MOSFET 2N-CH 120V 3.4A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 120V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 700µA, Supplier Device Package: Die.
Weitere Produktangebote EPC2110 nach Preis ab 2.09 EUR bis 6.18 EUR
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EPC2110 | EPC |
Description: MOSFET 2N-CH 120V 3.4A DIE Packaging: Cut Tape (CT) Package / Case: Die Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Supplier Device Package: Die |
auf Bestellung 12120 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2110 |
|
Hersteller: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 12120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.18 EUR |
| 10+ | 4.02 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.09 EUR |