EPC2203 Efficient Power Conversion
Hersteller: Efficient Power Conversion
Trans MOSFET N-CH GaN 80V 1.7A Automotive AEC-Q101 4-Pin Die T/R
Trans MOSFET N-CH GaN 80V 1.7A Automotive AEC-Q101 4-Pin Die T/R
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25000+ | 0.57 EUR |
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Technische Details EPC2203 Efficient Power Conversion
Description: GANFET N-CH 80V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 600µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +5.75V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote EPC2203
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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EPC2203 | Hersteller : EPC |
Description: GANFET N-CH 80V 1.7A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2203 | Hersteller : EPC |
Description: GANFET N-CH 80V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 80960 Stücke: Lieferzeit 10-14 Tag (e) |