EPC2203
Hersteller: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 12+ | 1.49 EUR |
| 100+ | 0.99 EUR |
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Technische Details EPC2203 EPC
Description: GANFET N-CH 80V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 600µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +5.75V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote EPC2203
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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EPC2203 | Hersteller : EPC |
Description: GANFET N-CH 80V 1.7A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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EPC2203 | Hersteller : EPC |
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9 |
Produkt ist nicht verfügbar |
