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EPC2206

EPC2206 Efficient Power Conversion

epc2206_datasheet.pdf Hersteller: Efficient Power Conversion
Trans MOSFET N-CH GaN 80V 90A 30-Pin Die T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
500+5.85 EUR
1000+ 4.95 EUR
Mindestbestellmenge: 500
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Technische Details EPC2206 Efficient Power Conversion

Description: GANFET N-CH 80V 90A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 13mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40.

Weitere Produktangebote EPC2206 nach Preis ab 5.2 EUR bis 10.68 EUR

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Preis ohne MwSt
EPC2206 EPC2206 Hersteller : EPC EPC2206_datasheet.pdf Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+6.44 EUR
1000+ 5.52 EUR
2500+ 5.2 EUR
Mindestbestellmenge: 500
EPC2206 EPC2206 Hersteller : EPC EPC2206_datasheet.pdf Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 60410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.68 EUR
10+ 8.96 EUR
100+ 7.25 EUR
Mindestbestellmenge: 2
EPC2206 Hersteller : Efficient Power Conversion epc2206_datasheet.pdf Trans MOSFET N-CH GaN 80V 90A 30-Pin Die T/R
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