EPC2206
Hersteller: EPCDescription: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 423000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 4.68 EUR |
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Technische Details EPC2206 EPC
Description: GANFET N-CH 80V 90A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 13mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote EPC2206 nach Preis ab 4.68 EUR bis 11.26 EUR
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EPC2206 | Hersteller : Efficient Power Conversion |
Trans MOSFET N-CH GaN 80V 90A 30-Pin Die T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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EPC2206 | Hersteller : EPC |
Description: GANFET N-CH 80V 90A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 423090 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2206 | Hersteller : Efficient Power Conversion |
Trans MOSFET N-CH GaN 80V 90A 30-Pin Die T/R |
Produkt ist nicht verfügbar |