
EPC2212

Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
auf Bestellung 102500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 2.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2212 EPC
Description: GANFET N-CH 100V 18A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Supplier Device Package: Die, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50, Qualification: AEC-Q101.
Weitere Produktangebote EPC2212 nach Preis ab 2.51 EUR bis 6.09 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
EPC2212 | Hersteller : EPC |
![]() Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Qualification: AEC-Q101 |
auf Bestellung 107143 Stücke: Lieferzeit 10-14 Tag (e) |
|