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EPC2214


EPC2214_datasheet.pdf
Hersteller: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.42 EUR
5000+1.32 EUR
7500+1.27 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2214 EPC

Description: GANFET N-CH 80V 10A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: Die, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote EPC2214 nach Preis ab 1.33 EUR bis 4.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EPC2214 EPC2214 EPC EPC2214_datasheet.pdf Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 108557 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
1000+1.56 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2214 EPC2214 EPC EPC2214_datasheet.pdf GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 11558 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.82 EUR
10+3.09 EUR
100+2.12 EUR
500+1.7 EUR
1000+1.57 EUR
2500+1.42 EUR
5000+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2214 EPC2214_datasheet.pdf
Hersteller: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 108557 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
1000+1.56 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2214 EPC2214_datasheet.pdf
Hersteller: EPC
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 11558 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.82 EUR
10+3.09 EUR
100+2.12 EUR
500+1.7 EUR
1000+1.57 EUR
2500+1.42 EUR
5000+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH