EPC2366ENGRT
Hersteller: EPCDescription: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.62 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.08 EUR |
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Technische Details EPC2366ENGRT EPC
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ, Packaging: Tape & Reel (TR), Package / Case: 5-PowerWQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A, Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 12mA, Supplier Device Package: 5-QFN (3.3x2.6), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V.
Weitere Produktangebote EPC2366ENGRT
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| EPC2366ENGRT | Hersteller : EPC |
Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ Packaging: Tape & Reel (TR) Package / Case: 5-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Supplier Device Package: 5-QFN (3.3x2.6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V |
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