EPC7007BSH EPC Space, LLC

Description: GAN FET HEMT 200V 18A 4UB, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): +6V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: 4-SMD, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Bulk.