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EPC7019GC EPC Space, LLC


EPC7019G-datasheet.pdf
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 95A COTS 5UB
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 5-SMD
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
Current - Test: 50 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
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Technische Details EPC7019GC EPC Space, LLC

Description: GAN FET HEMT 40V 95A COTS 5UB, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +6V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: 5-SMD, Vgs(th) (Max) @ Id: 2.5V @ 18mA, Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: GaN HEMT, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-SMD, No Lead, Packaging: Bulk, Current - Test: 50 A, Voltage - Test: 20 V, Voltage - Rated: 40 V, Configuration: N-Channel.