EPC8010
Produktcode: 186444
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Weitere Produktangebote EPC8010 nach Preis ab 1.42 EUR bis 4.93 EUR
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EPC8010 | Hersteller : EPC |
Description: GANFET N-CH 100V 4A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8010 | Hersteller : EPC |
GaN FETs EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85 |
auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC8010 | Hersteller : EPC |
Description: GANFET N-CH 100V 4A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 19469 Stücke: Lieferzeit 10-14 Tag (e) |
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