ES1DL M2G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTORCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; DO219AB; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Case: DO219AB
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11495+ | 0.05 EUR |
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Technische Details ES1DL M2G TAIWAN SEMICONDUCTOR
Description: DIODE STANDARD 200V 1A SUB SMA, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: Sub SMA, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote ES1DL M2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ES1DL M2G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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ES1DL M2G | Hersteller : Taiwan Semiconductor |
Rectifiers 35ns 1A 200V Super F ast Recovery Rect |
Produkt ist nicht verfügbar |