ES1DL R2G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Case: subSMA
Capacitance: 10pF
Max. off-state voltage: 200V
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Case: subSMA
Capacitance: 10pF
Max. off-state voltage: 200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1010 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
447+ | 0.16 EUR |
506+ | 0.14 EUR |
575+ | 0.12 EUR |
626+ | 0.11 EUR |
7500+ | 0.1 EUR |
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Technische Details ES1DL R2G TAIWAN SEMICONDUCTOR
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V, Mounting: SMD, Max. forward voltage: 0.95V, Load current: 1A, Semiconductor structure: single diode, Reverse recovery time: 35ns, Max. forward impulse current: 30A, Kind of package: reel; tape, Type of diode: rectifying, Features of semiconductor devices: glass passivated; ultrafast switching, Case: subSMA, Capacitance: 10pF, Max. off-state voltage: 200V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ES1DL R2G nach Preis ab 0.11 EUR bis 0.16 EUR
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ES1DL R2G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V Mounting: SMD Max. forward voltage: 0.95V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Case: subSMA Capacitance: 10pF Max. off-state voltage: 200V |
auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1DL R2G | Hersteller : Taiwan Semiconductor | Rectifiers 35ns, 1A, 200V, Super Fast Recovery Rectifier |
Produkt ist nicht verfügbar |