ES1FL RVG Taiwan Semiconductor
auf Bestellung 1678 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 205+ | 0.76 EUR |
| 264+ | 0.57 EUR |
| 267+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.27 EUR |
Produktrezensionen
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Technische Details ES1FL RVG Taiwan Semiconductor
Description: DIODE GEN PURP 300V 1A SUB SMA, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: Sub SMA, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 300 V.
Weitere Produktangebote ES1FL RVG nach Preis ab 0.25 EUR bis 0.88 EUR
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ES1FL RVG | Hersteller : Taiwan Semiconductor |
 Diode Switching 300V 1A 2-Pin Sub SMA T/R |
auf Bestellung 1678 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1FL RVG | Hersteller : Taiwan Semiconductor |
Diode Switching 300V 1A 2-Pin Sub SMA T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1FL RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
Produkt ist nicht verfügbar |
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ES1FL RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
Produkt ist nicht verfügbar |
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ES1FL RVG | Hersteller : Taiwan Semiconductor |
Rectifiers 35ns 1A 300V Super F ast Recovery Rect |
Produkt ist nicht verfügbar |