ES3AHE3_A/H Vishay General Semiconductor
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.42 EUR |
| 850+ | 0.39 EUR |
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Technische Details ES3AHE3_A/H Vishay General Semiconductor
Description: DIODE GEN PURP 50V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote ES3AHE3_A/H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ES3AHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 50V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
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