ESD0P2RF02LRHE6327XTSA1 Infineon Technologies
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Technische Details ESD0P2RF02LRHE6327XTSA1 Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSLP-2, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 125°C (TJ), Applications: RF Antenna, Capacitance @ Frequency: 0.23pF @ 1MHz, Current - Peak Pulse (10/1000µs): 3A (8/20µs), Voltage - Reverse Standoff (Typ): 5.3V (Max), Supplier Device Package: PG-TSLP-2-17, Bidirectional Channels: 1, Voltage - Breakdown (Min): 7V, Voltage - Clamping (Max) @ Ipp: 21V, Power Line Protection: No.
Weitere Produktangebote ESD0P2RF02LRHE6327XTSA1
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ESD0P2RF02LRHE6327XTSA1 | Hersteller : Infineon Technologies |
 Description: TVS DIODE 5.3VWM 21VC TSLP-2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No |
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ESD0P2RF02LRHE6327XTSA1 | Hersteller : Infineon Technologies |
Description: TVS DIODE 5.3VWM 21VC TSLP-2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No |
Produkt ist nicht verfügbar |