ESD9BL24P DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: Bidirectional TVS SMD diodes
Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26...30V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.35kW
Max. forward impulse current: 1A
Leakage current: 0.5µA
Version: ESD
Capacitance: 35pF
Anzahl je Verpackung: 10000 Stücke
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Technische Details ESD9BL24P DIOTEC SEMICONDUCTOR
Description: TVS DIODE 24VWM 60VC SOD882, Packaging: Bulk, Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -50°C ~ 125°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 35pF @ 1MHz, Current - Peak Pulse (10/1000µs): 6A (8/20µs), Voltage - Reverse Standoff (Typ): 24V, Supplier Device Package: SOD-882 (DFN1006-2), Bidirectional Channels: 1, Voltage - Breakdown (Min): 26V, Voltage - Clamping (Max) @ Ipp: 60V, Power - Peak Pulse: 350W, Power Line Protection: No.
Weitere Produktangebote ESD9BL24P
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ESD9BL24P | Hersteller : Diotec Semiconductor |
Description: TVS DIODE 24VWM 60VC SOD882 Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SOD-882 (DFN1006-2) Bidirectional Channels: 1 Voltage - Breakdown (Min): 26V Voltage - Clamping (Max) @ Ipp: 60V Power - Peak Pulse: 350W Power Line Protection: No |
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ESD9BL24P | Hersteller : Diotec Semiconductor |
ESD Protection Diodes / TVS Diodes ESD Diode, DFN1006-2, 125C, 350W, Unidir |
Produkt ist nicht verfügbar |
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ESD9BL24P | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 26...30V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.35kW Max. forward impulse current: 1A Leakage current: 0.5µA Version: ESD Capacitance: 35pF |
Produkt ist nicht verfügbar |