ESH2BHE3/52T Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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Technische Details ESH2BHE3/52T Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA, Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).