
ESH2CHE3_A/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details ESH2CHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 150 V.
Weitere Produktangebote ESH2CHE3_A/I
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
ESH2CHE3_A/I | Hersteller : Vishay Semiconductors |
![]() |
Produkt ist nicht verfügbar |