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F1235R12KT4GBOSA1 Infineon Technologies


F12-35R12KT4G_Rev2_2013-11-04.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Part Status: Obsolete
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details F1235R12KT4GBOSA1 Infineon Technologies

Description: IGBT MOD 1200V 35A 210W, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 210 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 35 A, Part Status: Obsolete, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.