F3L400R12PT4B26BOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 2150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
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Technische Details F3L400R12PT4B26BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 600A 2150W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 600 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2150 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 25 nF @ 25 V.
Weitere Produktangebote F3L400R12PT4B26BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| F3L400R12PT4B26BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC Type of semiconductor module: IGBT Electrical mounting: Press-Fit; screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Max. off-state voltage: 1.2kV Topology: 3-level inverter TNPC; NTC thermistor Power dissipation: 2.15kW Semiconductor structure: transistor/transistor Technology: EconoPACK™ 4 |
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