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F3L400R12PT4B26BOSA1 Infineon Technologies


Infineon-F3L400R12PT4_B26-DS-v02_00-DE.pdf?fileId=db3a30433a747525013a879896ef6412
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 2150W
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 2150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details F3L400R12PT4B26BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 600A 2150W, Input Capacitance (Cies) @ Vce: 25 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 2150 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 600 A, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.

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F3L400R12PT4B26BOSA1 INFINEON TECHNOLOGIES Infineon-F3L400R12PT4_B26-DS-v02_00-DE.pdf?fileId=db3a30433a747525013a879896ef6412 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: 3-level inverter TNPC; NTC thermistor
Power dissipation: 2.15kW
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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F3L400R12PT4B26BOSA1 Infineon-F3L400R12PT4_B26-DS-v02_00-DE.pdf?fileId=db3a30433a747525013a879896ef6412
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: 3-level inverter TNPC; NTC thermistor
Power dissipation: 2.15kW
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH