F3L6MR20W2M1HB70BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 459.29 EUR |
| 15+ | 451.35 EUR |
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Technische Details F3L6MR20W2M1HB70BPSA1 Infineon Technologies
Description: F3L6MR20W2M1HB70BPSA1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 2000V (2kV), Current - Continuous Drain (Id) @ 25°C: 155A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV, Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V, Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 5.15V @ 112mA.
Weitere Produktangebote F3L6MR20W2M1HB70BPSA1 nach Preis ab 465.48 EUR bis 543.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| F3L6MR20W2M1HB70BPSA1 | Hersteller : Infineon Technologies |
EASY STANDARD |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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