F411MR12W2M1B76BOMA1 Infineon Technologies
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 422.72 EUR |
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Technische Details F411MR12W2M1B76BOMA1 Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V, Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V, Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 40mA, Supplier Device Package: AG-EASY1B-2, Part Status: Obsolete.
Weitere Produktangebote F411MR12W2M1B76BOMA1 nach Preis ab 413.70 EUR bis 624.31 EUR
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F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH SiC 1.2KV 100A 34-Pin Tray |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 100A 34-Pin Tray |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 4N-CH 1200V AG-EASY1B Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Supplier Device Package: AG-EASY1B-2 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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F411MR12W2M1B76BOMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - F411MR12W2M1B76BOMA1 - F411MR12 FOURPACK 1200 V COOLSIC MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies | IGBT Modules LOW POWER EASY |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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| F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies |
SP005419343 |
Produkt ist nicht verfügbar |
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F411MR12W2M1B76BOMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 4N-CH 1200V AG-EASY1B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Supplier Device Package: AG-EASY1B-2 Part Status: Obsolete |
Produkt ist nicht verfügbar |