F413MXTR12C1M2H11BPSA1 Infineon Technologies
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 232.8 EUR |
| 10+ | 197.03 EUR |
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Technische Details F413MXTR12C1M2H11BPSA1 Infineon Technologies
Description: F413MXTR12C1M2H11BPSA1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 20mW, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 60A, Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 800V, Rds On (Max) @ Id, Vgs: 12.5mOhm @ 50A, 18V, Gate Charge (Qg) (Max) @ Vgs: 158nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 22mA.
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F413MXTR12C1M2H11BPSA1 | Hersteller : Infineon Technologies |
 Description: F413MXTR12C1M2H11BPSA1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 20mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 60A Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 800V Rds On (Max) @ Id, Vgs: 12.5mOhm @ 50A, 18V Gate Charge (Qg) (Max) @ Vgs: 158nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 22mA |
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