F435MR07W1D7S8B11ABPSA1 Infineon Technologies
Hersteller: Infineon Technologies
IGBT Modules Automotive grade Easy modules for On Board Charger (OBC) and EV aux applications
| Anzahl | Preis |
|---|---|
| 1+ | 87.52 EUR |
| 10+ | 75.96 EUR |
| 120+ | 74.41 EUR |
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Technische Details F435MR07W1D7S8B11ABPSA1 Infineon Technologies
Description: MOSFET 4N-CH 650V 35A MODULE, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4.45V @ 1.74mA, Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V, Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V, Current - Continuous Drain (Id) @ 25°C: 35A, Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote F435MR07W1D7S8B11ABPSA1 nach Preis ab 86.31 EUR bis 96.18 EUR
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F435MR07W1D7S8B11ABPSA1 | Infineon Technologies |
Description: MOSFET 4N-CH 650V 35A MODULE Supplier Device Package: Module Vgs(th) (Max) @ Id: 4.45V @ 1.74mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V Current - Continuous Drain (Id) @ 25°C: 35A Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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| F435MR07W1D7S8B11ABPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 650V 35A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Current - Continuous Drain (Id) @ 25°C: 35A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 4N-CH 650V 35A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Current - Continuous Drain (Id) @ 25°C: 35A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 96.18 EUR |
| 24+ | 86.31 EUR |