F435MR07W1D7S8B11ABPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesIGBT Modules Automotive grade Easy modules for On Board Charger (OBC) and EV aux applications
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 89.44 EUR |
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Technische Details F435MR07W1D7S8B11ABPSA1 Infineon Technologies
Description: MOSFET 4N-CH 650V 35A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 35A, Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V, Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V, Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V, Vgs(th) (Max) @ Id: 4.45V @ 1.74mA, Supplier Device Package: Module.
Weitere Produktangebote F435MR07W1D7S8B11ABPSA1 nach Preis ab 86.31 EUR bis 96.18 EUR
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F435MR07W1D7S8B11ABPSA1 | Hersteller : Infineon Technologies |
Description: MOSFET 4N-CH 650V 35A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs(th) (Max) @ Id: 4.45V @ 1.74mA Supplier Device Package: Module |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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| F435MR07W1D7S8B11ABPSA1 | Hersteller : Infineon Technologies |
EV AUXILIARIES |
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