F475R07W2H3B51BPSA1 Infineon Technologies
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Technische Details F475R07W2H3B51BPSA1 Infineon Technologies
Description: IGBT MODULE 650V 75A 250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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F475R07W2H3B51BPSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V |
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