FAM65CR51ADZ1 onsemi
Hersteller: onsemiDiscrete Semiconductor Modules APM16-CDA SF3 650V 51MOHM SIC DIODE AL2O3 Y-FORMING PFC
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.2 EUR |
| 12+ | 46.25 EUR |
| 108+ | 38.93 EUR |
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Technische Details FAM65CR51ADZ1 onsemi
Description: MOSFET 2N-CH 650V 41A APMCD-B16, Packaging: Tube, Package / Case: 12-SSIP Exposed Pad, Formed Leads, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 189W (Tc), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V, Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 3.3mA, Supplier Device Package: APMCD-B16, Grade: Automotive, Qualification: AEC-Q101.
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FAM65CR51ADZ1 | Hersteller : onsemi |
Description: MOSFET 2N-CH 650V 41A APMCD-B16 Packaging: Tube Package / Case: 12-SSIP Exposed Pad, Formed Leads Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 189W (Tc) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs(th) (Max) @ Id: 5V @ 3.3mA Supplier Device Package: APMCD-B16 Grade: Automotive Qualification: AEC-Q101 |
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