FAM65CR51ADZ1 onsemi

Description: MOSFET 2N-CH 650V 41A APMCD-B16, Packaging: Tube, Package / Case: 12-SSIP Exposed Pad, Formed Leads, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 189W (Tc), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V, Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 3.3mA, Supplier Device Package: APMCD-B16, Grade: Automotive, Qualification: AEC-Q101.